Gallium Oxide Ga2O3, waa budo cad, oo aan lagu milmin karin biyaha, laakiin ku milma inta badan asiidhyada, labada waji iyo β wejiyada 'crystal,' waa agab aad u wanaagsan oo sifooyin leh oo ka kooban faraq aad u ballaadhan oo ka weyn 4.9 eV iyo helitaanka baaxad weyn, tayo sare leh substrates hooyo laga soo saaray dhalaalaya-koray bulukeeti keli ah.
Gallium Oxide Ga2O3 waa shey semiconductor hufan oo hufan, kaas oo si ballaadhan loogu adeegsado aaladaha optoelectronic, sida dahaarka lakabka qalabka semiconductor ee Ga-ku saleysan, miirayaasha ultraviolet, iyo qalabka kiimikada O2. Iyo sidoo kale loo isticmaalay fosfooraska diod-soo-saarka iftiinka, leysarka, reagent daahir sare iyo walxo kale oo iftiin leh.
Muuqaal | cad cad |
Miisaanka Molecular | 187.44 |
Cufnaanta | - |
Barta dhalaalida | 1740 ° C |
CAS Maya | 12024-21-4 |
Muunad |
Gaarsiinta |
Muddada Qiimaha |
Tayada |
Falanqeyn |
Xirxirida |
Lacag bixinta |
NDA |
Iibinta Kadib |
Masuuliyad |
Xeerarka |
La heli karo |
By Express / Hawada |
CPT / CFR / FOB / CIF |
COA / COC |
Waxaa qoray XRD / SEM / ICP / GDMS |
UN Standard |
T / TD / PL / C |
Waajibaadka Shaacin La'aanta |
Adeegyo Cabbir buuxa |
Siyaasadda Macdanta Aan Khilaafka Ahayn |
RoHS / REACH |
Maya. | Shayga |
Qeexitaanka Heerka |
|||
1 |
Ga2O3 ≥ |
99.99% |
99.999% |
99.9999% |
|
2 |
Nijaasta
Ugu badnaan PPM kasta |
Bb |
8 |
1.50 |
0.10 |
Na |
10 |
1.00 |
- |
||
Mg |
3 |
0.10 |
- |
||
Ni |
3 |
0.10 |
- |
||
Mn |
3 |
0.10 |
0.05 |
||
Cr |
5 |
0.50 |
- |
||
Ca |
5 |
0.50 |
0.05 |
||
Al / Fe |
10 |
1.00 |
0.10 |
||
Co / Cd |
5 |
0.50 |
0.05 |
||
Cu / Sn |
5 |
0.50 |
0.10 |
||
3 |
Cabir |
D50≤4um, -80mesh, 50-100mesh |
|||
4 |
Foomka Crystallographic |
α ama β nooca |
|||
5 |
Xirxirida |
1kg dhalada balaastigga ah |
Muuqaal | cad cad |
Miisaanka jirka | 187.44 |
Cufnaanta | - |
Barta dhalaalida | 1740 ° C |
CAS Maya | 12024-21-4 |
Muunad | La heli karo |
Gaarsiinta | By Express / Hawada |
Muddada Qiimaha | CPT / CFR / FOB / CIF |
Tayada | COA / COC |
Falanqeyn | Waxaa qoray XRD / SEM / ICP / GDMS |
Xirxirida | UN Standard |
Lacag bixinta | T / TD / PL / C ama Shuruudaha Dabacsan |
NDA | Waajibaadka Shaacin La'aanta |
Iibinta Kadib | Adeegyo Cabbir buuxa |
Masuuliyad | Siyaasadda Macdanta Aan Khilaafka Ahayn |
Xeerarka | RoHS / REACH |
Maya. | Shayga |
Qeexitaanka Heerka |
|||
1 |
Ga2O3 ≥ |
99.99% |
99.999% |
99.9999% |
|
2 |
Nijaasta
PPM Max kasta |
Bb |
8 |
1.50 |
0.10 |
Na |
10 |
1.00 |
- |
||
Mg |
3 |
0.10 |
- |
||
Ni |
3 |
0.10 |
- |
||
Mn |
3 |
0.10 |
0.05 |
||
Cr |
5 |
0.50 |
- |
||
Ca |
5 |
0.50 |
0.05 |
||
Al / Fe |
10 |
1.00 |
0.10 |
||
Co / Cd |
5 |
0.50 |
0.05 |
||
Cu / Sn |
5 |
0.50 |
0.10 |
||
3 |
Cabir |
D50≤4um, -80mesh, 50-100mesh |
|||
4 |
Foomka Crystallographic |
α ama β nooca |
|||
5 |
Xirxirida |
1kg dhalada balaastigga ah |