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Cadmium Arsenide Cd3As2 | GaAs InAs Nb3As2 Featured Image
  • Cadmium Arsenide Cd3As2 | GaAs InAs Nb3As2
  • Cadmium Arsenide Cd3As2 | GaAs InAs Nb3As2
  • Cadmium Arsenide Cd3As2 | GaAs InAs Nb3As2
  • Cadmium Arsenide Cd3As2 | GaAs InAs Nb3As2
  • Cadmium Arsenide Cd3As2 | GaAs InAs Nb3As2

Cadmium Arsenide Cd3As2|GaAs InAs Nb3As2

Sharaxaada

Cadmium Arsenide Cd3As25N 99.999%,Midabka madow ee madow, cufnaanta 6.211g/cm3, barta dhalaalka 721°C, molecule 487.04, CAS12006-15-4, oo ku milma nitric acid HNO3 iyo xasilloonida hawada, waa walxo isku dhafan oo cadmium iyo arsenic nadiif ah oo sarreeya.Cadmium Arsenide waa nus bir ah oo aan organic ahayn oo ka tirsan qoyska II-V waxayna muujisaa Saamaynta Nernst.Cadmium Arsenide crystal koray by habka kobaca Bridgman, qaab-dhismeedka semimetal Dirac bulk aan lakabka ahayn, waa N-nooca II-V semiconductor xumaaday ama semiconductor cidhiidhi ah oo leh dhaqdhaqaaqa side sare, cuf-hooseeya, iyo conduction aan parabolic heer sare ah. band.Cadmium Arsenide Cd3As2 ama CdAs waa crystalline adag oo ka heli codsi badan iyo in ka badan gudaha semiconductor iyo goobta sawirka optic sida infrared detectors isticmaalaya saamaynta Nernst, ee filim khafiif ah-filim cadaadis firfircoon, leysarka, LED diodes iftiinka, dhibcood quantum, si samee magnetoresistors iyo sawir-qaadayaasha.Iskudhisyada Arsenide ee Arsenide GaAs, Indium Arsenide InAs iyo Niobium Arsenide NbAs ama Nb5As3U hel codsi dheeri ah sida walxaha elektrolytka, walxaha semiconductor, bandhiga QLED, garoonka IC iyo meelaha kale ee agabka.

gaarsiin

Cadmium Arsenide Cd3As2iyo Gallium Arsenide GaAs, Indium Arsenide InAs iyo Niobium Arsenide NbAs ama Nb5As3at Western Minmetals (SC) Corporation oo leh 99.99% 4N iyo 99.999% 5N daahirnimadu waa cabbirka micropowder polycrystalline -60mesh, -80mesh, nanoparticle, buro 1-20mm, granule 1-6mm, jajab, bannaan, crystal bulk iyo hal crystal iwm ., ama sida loo habeeyey si loo gaadho xalka ugu fiican.


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Tilmaamaha Farsamada

Isku dhafka Arsenide

Isku dhafka Arsenide Inta badan tixraac canaasirta birta ah iyo iskudhisyada metalloid, kuwaas oo leh halabuurka stoichiometric isbedelaya ilaa xad gaar ah si ay u sameeyaan xal adag oo iskudhis ku salaysan.Isku-dhafka birta ah ee ka dhexeeya birta iyo dhoobada ayaa ah sifooyinkeeda ugu fiican, waxayna noqdaan laan muhiim ah oo ka mid ah qalabka cusub ee dhismaha.Ka sokow Gallium Arsenide GaAs, Indium Arsenide InAs iyo Niobium Arsenide NbAs ama Nb5As3Waxa kale oo lagu soo saari karaa qaab budo, granule, buro, bar, crystal iyo substrate.

Cadmium Arsenide Cd3As2iyo Gallium Arsenide GaAs, Indium Arsenide InAs iyo Niobium Arsenide NbAs ama Nb5As3at Western Minmetals (SC) Corporation oo leh 99.99% 4N iyo 99.999% 5N daahirnimadu waa cabbirka micropowder polycrystalline -60mesh, -80mesh, nanoparticle, buro 1-20mm, granule 1-6mm, jajab, bannaan, crystal bulk iyo hal crystal iwm ., ama sida loo habeeyey si loo gaadho xalka ugu fiican.

CM-W2

GaAs-W3

Maya

Shayga

Tilmaamaha Heerka

daahirnimo

Xumaanta PPM Max kasta

Cabbirka

1

Cadmium ArsenideCd3As2

5N

 Ag/Cu/Ca/Mg/Sn/Fe/Cr/Bi 0.5, Ni/S 0.2, Zn/Pb 1.0

-60mesh -80budada mesh, buro 1-20mm, 1-6mm granule

2

Gallium Arsenide GaAs

5N 6N 7N

 Halabuurka GaAs waa la heli karaa marka la codsado

3

Niobium Arsenide NbAs

3N5

 Halabuurka NbAs waa la heli karaa marka la codsado

4

Indium Arsenide InAs

5N 6N

 InAs Composition waa la heli karaa marka la codsado

5

Baakad

500g ama 1000g oo ku jira dhalada polyetylen ama bac isku dhafan, sanduuq kartoon oo ka baxsan

Gallium Arsenide

GaAs

Gallium Arsenide, a III-V walax semiconductor tooska ah oo leh qaab dhismeedka zinc blende crystal, waxaa lagu farsameeyay gallium daahirnimo sare leh iyo walxo arsenic ah, waxaana la jarjaraa oo lagu dhejin karaa wafer iyo maran laga bilaabo hal galaas oo crystalline ah oo koray habka Vertical Gradient Freeze (VGF) .Waad ku mahadsan tahay dhaq-dhaqaaqeeda hoolka ee buuxa iyo awoodda sare & xasilloonida heerkulka, qaybahaas RF, microwave ICs & aaladaha LED-ka ee ay sameeyeen dhamaantood waxay ku guulaystaan ​​​​wax qabad weyn goobahooda isgaarsiinta ee soo noqnoqda.Dhanka kale, waxtarkeeda gudbinta iftiinka UV waxay sidoo kale u oggolaaneysaa inay noqoto qalab aasaasi ah oo la xaqiijiyay oo ku jira warshadaha Photovoltaic.Gallium Arsenide GaAs wafer at Western Minmetals (SC) Corporation waxaa la geyn karaa ilaa 6" ama 150mm dhexroor ah oo leh 6N 7N daahirsanaan ah, iyo Gallium Arsenide substrate makaanik sidoo kale waa la heli karaa. Dhanka kale, Gallium Arsenide polycrystalline bar, buro iyo granule iwm oo leh daahir. oo ah 99.999% 5N, 99.9999% 6N, 99.99999% 7N oo laga helay Western Minmetals (SC) Corporation sidoo kale waa la heli karaa ama si gaar ah ayaa loo habeeyey marka la codsado.

Indium Arsenide

InAs

Indium Arsenide InAs, semiconductor-ka tooska ah ee farqiga u dhexeeya qaab dhismeedka zinc-blende, oo ay ku jiraan nadiifin sare oo indium ah iyo walxo arsenic ah, oo ay koreen habka Liquid Encapsulated Czochralski (LEC), waa la jarjaray oo laga dhex-abuuri karaa wafer laga soo bilaabo hal galaas crystalline.Sababo la xiriira cufnaanta kala-baxa ee hooseeya laakiin qulqulka joogtada ah, InAs waa substrate ku habboon si loo sii taageero qaababka kala duwan ee InAsSb, InAsPSb & InNAsSb, ama qaabdhismeedka sare ee AlGaSb.Sidaa darteed, waxay door muhiim ah ka ciyaartaa 2-14 μm hirarka kala duwan ee aaladaha soo saarista infrared.Ka sokow, dhaqdhaqaaqa hoolka ugu sarreeya laakiin tamar cidhiidhi ah ee InAs waxay sidoo kale u oggolaaneysaa inay noqoto substrate-ka weyn ee qaybaha hoolka ama qalabka kale ee laysarka & soosaarka.Indium Arsenide InAs at Western Minmetals (SC) Corporation oo leh nadiif ah 99.99% 4N, 99.999% 5N, 99.9999% 6N waxaa lagu geyn karaa substrate of 2" 3" 4" dhexroor. Dhanka kale, Indium Arsenide polycrystalline buro ee Western Minmetals (SC) ) Shirkadda sidoo kale waa la heli karaa ama si gaar ah ayaa loo habeeyey marka la codsado.

Niobium Arsenide

NbAs-2

Niobium Arsenide Nb5As3 or NbAs,cad-cad ama cawlan adag, CAS No.12255-08-2, caanaha caanaha 653.327 Nb5As3iyo 167.828 NbAs, waa laba-geesood oo ka kooban Niobium iyo Arsenic oo ka kooban NbAs, Nb5As3, NbAs4… iwm oo lagu farsameeyay habka CVD, cusbadan adagi waxay leeyihiin tamar aad u saraysa waana sun ay sabab u tahay sunta arsenic ee ku jirta.Falanqaynta kulaylka sare waxay muujinaysaa NdAs soo bandhigay isbeddelka arsenic marka la kululeeyo. Niobium Arsenide, Semimetal Weyl ah, waa nooc ka mid ah semiconductor iyo qalabka korantada ee codsiyada semiconductor, photo optic, laser light-etting diodes, dhibcaha quantum, dareemayaasha indhaha iyo cadaadiska, sida dhexdhexaadinta, iyo in la sameeyo superconductor iwm Niobium Arsenide Nb5As3ama NbAs at Western Minmetals (SC) Corporation oo leh nadiif ah 99.99% 4N waxaa lagu geyn karaa qaabka budada, granule, buro, bartilmaameed iyo bulk crystal iwm ama si gaar ah loo habeeyey, kaas oo lagu hayo si fiican u xiran, iftiin u adkaysta. , meel qalalan oo qabow.

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Cd2As3 Nb2As3GaAs InAs

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