Gallium Nitride GaN

Sharaxaada

Gallium Nitride GaN, CAS 25617-97-4, molecular mass 83.73, dhismaha crystal wurtzite, waa binary ka kooban si toos ah band-farqi semiconductor ee kooxda III-V koray by habka ammonothermal aad u horumarsan.Lagu sifeeyay tayada crystalline kaamilka ah, dhaqdhaqaaqa kulaylka sareeyo, dhaqdhaqaqa elektaroonigga sare, beer koronto oo aad u muhiim ah iyo bandgap ballaaran, Gallium Nitride GaN waxay leedahay astaamo la jecel yahay oo ku jira optoelectronics iyo codsiyada dareenka.

Codsiyada

Gallium Nitride GaN waxay ku habboon tahay soo saarista xawaaraha sare ee gees-goynta iyo awoodda sare ee iftiinka ifaya ee iftiiminaya qaybaha LED-yada, laysarka iyo aaladaha optoelectronics sida laser-cagaaran iyo buluug, transistors dhaqdhaqaaqa elektaroonigga sare (HEMTs) iyo awood sare iyo warshadaha wax soo saarka qalabka heerkulka sare.

gaarsiin

Gallium Nitride GaN ee Western Minmetals (SC) Corporation waxaa lagu bixin karaa cabbirka wafer wareeg ah 2 inch ”ama 4” (50mm, 100mm) iyo wafer labajibbaaran 10 × 10 ama 10 × 5 mm.Cabbir kasta oo la habeeyey iyo qeexid ayaa loogu talagalay xalka ugu fiican ee macaamiisheena adduunka oo dhan.

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Tilmaamaha Farsamada

Gallium Nitride GaN

Gallium Nitride GaNat Western Minmetals (SC) Corporation waxaa lagu bixin karaa cabbirka wafer wareeg ah 2 inch ”ama 4” (50mm, 100mm) iyo wafer laba jibaaran 10 × 10 ama 10 × 5 mm.Cabbir kasta oo la habeeyey iyo qeexid ayaa loogu talagalay xalka ugu fiican ee macaamiisheena adduunka oo dhan.

Maya	Walxaha	Tilmaamaha Heerka
1	Qaab	Wareegto	Wareegto	Square
2	Cabbirka	2"	4"	--
3	Dhexroor mm	50.8±0.5	100±0.5	--
4	Dhererka dhinaca mm	--	--	10x10 ama 10x5
5	Habka Kobaca	HVPE	HVPE	HVPE
6	Hanuuninta	C-diyaarad (0001)	C-diyaarad (0001)	C-diyaarad (0001)
7	Nooca Anshaxa	N-nooca/Si-doped, Un-doped, Semi-insulating
8	Iska caabin Ω-cm	<0.1, <0.05, >1E6
9	Dhumucda μm	350± 25	350± 25	350± 25
10	TTV μm max	15	15	15
11	Qaanso μm max	20	20	20
12	EPD cm-2	<5E8	<5E8	<5E8
13	Dhamaystir dusha sare	P/E, P/P	P/E, P/P	P/E, P/P
14	Qalafsanaanta dusha sare	Hore: ≤0.2nm, dhabarka: 0.5-1.5μm ama ≤0.2nm
15	Baakad	Weel kaliya oo wafer ah ayaa lagu xidhay bac aluminium ah.

Qaanuunka toosan	GAN
Miisaanka Molecular	83.73
Qaab dhismeedka crystal	Zinc blende/Wurtzite
Muuqashada	Mid adag oo hufan
Meesha dhalaalaysa	2500 °C
Barta Karsan	N/A
Cufnaanta 300K	6.15 g/cm³
Farqiga Tamarta	(3.2-3.29) eV at 300K
Iska caabin gudaha ah	> 1E8 Ω-cm
Lambarka CAS	25617-97-4
Lambarka EC	247-129-0

Gallium Nitride GaNwaxay ku habboon tahay soo saarista xawaaraha sare ee gees-goynta iyo awoodda sare ee iftiinka iftiinka-firfircoon ee qaybaha LED-yada, laysarka iyo aaladaha optoelectronics sida lasers cagaaran iyo buluug, alaabada dhaqdhaqaaqa elektaroonigga sare (HEMTs) iyo awood sare iyo sare- warshadaha wax soo saarka qalabka heerkulka.