Gallium Fosfide GaP

Sharaxaada

Gallium Phosphide GaP, oo ah semiconductor muhiim ah oo ka mid ah guryaha korantada ee gaarka ah sida walxaha kale ee III-V, oo ku dhex jira qaab dhismeedka kubeedka ZB ee heerkulbeegga ah, waa walxo crystal semitransparent orange-jaalle ah oo leh faraqa aan tooska ahayn ee 2.26 eV (300K), taas oo ah laga sameeyay 6N 7N gallium daahirnimo sare leh iyo fosfooraska, oo ku koray hal kiristaalo oo ay farsamaysay Liquid Encapsulated Czochralski (LEC).Gallium Phosphide crystal waa sulfur doped ama tellurium si loo helo semiconductor-nooca n-nooca, iyo zinc waxaa lagu dhejiyay sida p-nooc conductivity si loogu sii farsameeyo waferka la rabo, kaas oo leh codsiyada nidaamka indhaha, elektiroonigga iyo aaladaha kale ee optoelectronics.Halkii Crystal GaP wafer waxaa loo diyaarin karaa Epi-Diyaar u ah LPE, MOCVD iyo codsigaaga epitaxial ee MBE.Tayada sare leh hal crystal Gallium phosphide GaP wafer p-nooca, n-nooca ama conductivity aan la xirin ee Western Minmetal (SC) Corporation waxaa lagu bixin karaa cabbirka 2 "iyo 3" (50mm, 75mm dhexroor), hanuunin <100>, <111 > leh dusha sare ee sida-la jarjaray, la miiray ama hab-raac u diyaarsan.

Codsiyada

Iyada oo ay hooseyso waxtarka sare ee iftiinka iftiinka, Gallium phosphide GaP wafer wuxuu ku habboon yahay nidaamyada soo-bandhigidda indhaha sida casaan-yar, oranji, iyo iftiin cagaaran oo iftiin leh (LEDs) iyo iftiinka dambe ee LCD jaalaha iyo cagaarka iwm Nalka hooseeya ama dhexdhexaadka ah, GaP sidoo kale waxaa loo qaataa si ballaaran sida substrate-ka aasaasiga ah ee dareemayaasha infrared iyo la socodka wax soo saarka kamaradaha.

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Tilmaamaha Farsamada

Gallium Fosfide GaP

Tayada sare ee hal crystal Gallium Phosphide GaP wafer ama substrate p-nooca, n-nooca ama conductivity aan la xirin ee Western Minmetals (SC) Corporation waxaa lagu bixin karaa cabbirka 2 "iyo 3" (50mm, 75mm) dhexroor, hanuunin <100> , <111> oo leh dusha sare ee sida-goyn, dhabtii, xardhan, dhalaalay, Epi-diyaar u ah oo lagu farsameeyay weel maraq ah oo keliya oo lagu shaabadeeyey bac aluminium ka kooban ama sida loo habeeyey si loo helo xalka ugu fiican.

Maya	Walxaha	Tilmaamaha Heerka
1	Cabbirka GaP	2"
2	Dhexroor mm	50.8 ± 0.5
3	Habka Kobaca	LEC
4	Nooca Anshaxa	Nooca P-nooca/Zn-doped, N-nooca/(S, Si,Te)-doped, aan-doped lahayn
5	Hanuuninta	<1 1 1> ± 0.5°
6	Dhumucda μm	(300-400) ± 20
7	Iska caabin Ω-cm	0.003-0.3
8	Hanuuninta Flat (OF) mm	16±1
9	Flat Aqoonsiga (IF) mm	8±1
10	Dhaqdhaqaaqa Hall cm2/Vs min	100
11	Isku-duubnaanta side cm^-3	(2-20) E17
12	Cufnaanta Kala-baxa cm^-2max	2.00E+05
13	Dhamaystir dusha sare	P/E, P/P
14	Baakad	Weel kaliya oo wafer ah ayaa lagu xidhay bac aluminium ah, sanduuq kartoon oo dibadda ah

Qaanuunka toosan	GaP
Miisaanka Molecular	100.7
Qaab dhismeedka crystal	Isku darka Zinc
Muuqaal ahaan	Orange adag
Meesha dhalaalaysa	N/A
Barta Karsan	N/A
Cufnaanta 300K	4.14 g/cm³
Farqiga Tamarta	2.26 eV
Iska caabin gudaha ah	N/A
Lambarka CAS	12063-98-8
Lambarka EC	235-057-2

Gallium Fosfide GaP Wafer, oo leh hadda hooseeya iyo waxtarka sare ee iftiiminta iftiinka, waxay ku habboon tahay nidaamyada soo-bandhigidda indhaha sida casaan-yar, orange, iyo diodes iftiin-cagaaran ah (LEDs) iyo iftiinka dambe ee jaalaha iyo cagaarka LCD iwm. Iftiiminta, GaP sidoo kale waxaa loo qaataa si ballaaran sida substrate-ka aasaasiga ah ee dareemayaasha infrared iyo la socodka wax soo saarka kamaradaha.