FZ NTD Silicon Wafer

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FZ-NTD Silicon Wafer, oo loo yaqaano Float-Zone Neutron Transmutation Doped Silicon Wafer.Ogsajiin-free, nadiif sare iyo silikoon iska caabin sare waxaa la heli karaa by Float-zone FZ (Aaga-Sabaynta) koritaanka crystal, High resistivity FZ silikoon crystal waxaa inta badan lagu daraa habka Neutron Transmutation Doping (NTD), kaas oo neutron irradiation on aagga sabaynta aan la daboolin silicon si ay u sameeyaan isotopes Silicon ku xayiran neutrons ka dibna qudhmi galay dopants la doonayo si loo gaaro yoolka doping.Iyada oo la hagaajinayo heerka shucaaca neutron-ka, iska caabbinta waa la bedeli karaa iyada oo aan la soo bandhigin dopants dibadda ah sidaas darteedna la dammaanad qaadayo nadiifnimada alaabta.FZ NTD wafers silikoon (Salan Aagga Neutron Transmutation Doping Silicon) waxay leeyihiin sifooyin farsamo oo qaali ah oo isku-darka doping-ka lebbiska ah iyo qaybinta iska caabbinta shucaaca labbiska ah, heerarka wasakhda ugu hooseeya,iyo sidaha tirada yar ee sarreeya inta uu nool yahay.

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Sida suuqa oo hormuud ka ah alaab-qeybiyaha NTD silicon ee loogu talagalay codsiyada awoodda leh ee ballanqaadka ah, iyo la socoshada baahida sii kordheysa ee waferrada tayada sare leh, FZ NTD silicon waferat Western Minmetals (SC) Corporation waxaa la siin karaa macaamiisheena adduunka oo dhan cabbir kala duwan oo u dhexeeya 2 ″, 3″, 4″, 5″ iyo 6″ dhexroor (50mm, 75mm, 100mm, 125mm iyo 150mm) iyo ballaaran oo iska caabin ah. 5 ilaa 2000 ohm.cm gudaha <1-1-1>, <1-1-0>, <1-0-0> hanuuninta leh sida-goyn, dhabtii, xardhan oo sifaysan dusha sare ee xirmada sanduuqa xumbo ama cajalad , ama sida loo habeeyey ee xalka ugu fiican.

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Tilmaamaha Farsamada

FZ NTD Silicon Wafer

Iyada oo ah shirkad hormuud u ah alaab-qeybiyaha FZ NTD silicon ee loogu talagalay codsiyada awoodda leh ee ballanqaadka ah, iyo ka dib baahida sii kordheysa ee waferrada tayada sare leh, FZ NTD silicon wafer sare ee Western Minmetal (SC) Corporation waxaa la siin karaa macaamiisheena adduunka oo dhan cabbir kala duwan oo u dhexeeya 2 "ilaa 6" dhexroorka (50, 75, 100, 125 iyo 150mm) iyo baaxad weyn oo iska caabin ah 5 ilaa 2000 ohm-cm gudaha <1-1-1>, <1-1-0>, <1-0- 0> hanuuninta leh dusha duuban, xardhan oo dhalaalaysa oo ku jira xidhmo sanduuqa xumbo ama cajalad, sanduuq kartoon oo ka baxsan ama sida loo habeeyey ee xalka ugu fiican.

Maya	Walxaha	Tilmaamaha Heerka
1	Cabbirka	2"	3"	4"	5"	6"
2	Dhexroorka	50.8±0.3	76.2±0.3	100±0.5	125±0.5	150±0.5
3	Hab-dhaqanka	n-nooca	n-nooca	n-nooca	n-nooca	n-nooca
4	Hanuuninta	<100>, <111>, <110>
5	Dhumucda μm	279, 381, 425, 525, 575, 625, 675, 725 ama sida loo baahdo
6	Iska caabin Ω-cm	36-44, 44-52, 90-110, 100-250, 200-400 ama sida loo baahdo
7	RRV max	8%, 10%, 12%
8	TTV μm max	10	10	10	10	10
9	Qaanso/Warp μm max	30	30	30	30	30
10	Qaade Lifetime μs	> 200, > 300, > 400 ama sida loo baahdo
11	Dhamaystir dusha sare	Sida loo gooyay, Lafsaday, La tolay
12	Baakad	Sanduuqa xumbo gudaha, sanduuqa kartoon ee dibadda.

Qiyaasta Qalabka aasaasiga ah

Astaanta	Si
Lambarka atomiga	14
Miisaanka Atoomiga	28.09
Qaybta Qaybta	Metalloid
Kooxda, Muddada, xannibaadda	14, 3, P
Qaab dhismeedka crystal	Dheeman
Midabka	Cawlan madow
Meesha dhalaalaysa	1414°C, 1687.15 K
Barta Karsan	3265°C, 3538.15 K
Cufnaanta 300K	2.329 g/cm³
Iska caabin gudaha ah	3.2E5 Ω-cm
Lambarka CAS	7440-21-3
Lambarka EC	231-130-8

FZ-NTD Silicon Waferwaa muhiimada ugu weyn ee codsiyada awooda sare, tignoolajiyada wax baadha iyo aaladaha semiconductor ee ay tahay inay ku shaqeeyaan xaalado aad u daran ama meesha kala duwanaanshiyaha iska caabbinta hoose looga baahan yahay, sida gate-off thyristor GTO, static induction thyristor SITH, Giant transistor GTR, transistor-ga laba-cirifoodka transistor IGBT, PIN dheeraad ah oo HV ah.FZ NTD n-nooca silikoon wafer sidoo kale waa agab shaqo oo muhiim ah oo loogu talagalay beddelayaasha soo noqnoqda ee kala duwan, rectifiers, walxaha kontoroolka awoodda weyn, aaladaha korantada cusub, aaladaha elektiroonigga ah, hagaajinta silicon SR, kontoroolka silicon SCR, iyo qaybaha indhaha sida lenses iyo daaqadaha codsiyada terahertz.