Indium oxide

Sharaxaada

Indium oxide In₂O₃ama indium trioxide 99.99%, 99.995%, 99.999% iyo 99.9999%, budada yar yar ama nanoparticle budo adag oo jaale ah, CAS 1312-43-3, cufnaanta 7.18g/cm³oo dhalaalaysa ilaa 2000°C, waa walxo xasiloon oo u eg dhoobada oo aan lagu milmi karin biyaha, laakiin ku milma aashitada inorganic ee kulul.Indium oxide gudaha₂O₃waa maaddo shaqaynaysa nooca-n-semiconductor-ka oo leh iska caabin yar, firfircooni firfircooni sare leh iyo faraqa ballaadhan ee codsiyada optoelectronic. Indium oxide gudaha₂O₃at Western Minmetals (SC) Corporation waxaa lagu geyn karaa iyadoo nadiif ah 99.99%, 99.995%, 99.999% iyo 99.9999% ee size of 2-10 micron ama -100 mesh budada iyo nano fasalka, 1kg ka buuxaan in dhalo polyetylen leh bac xiran, ama 1kg, 2kg 5kg oo ku jira bac aluminium ah oo isku dhafan oo leh sanduuq kartoon oo ka baxsan, ama sida loo habeeyey xalalka ugu fiican.

Codsiyada

Indium oxide gudaha₂O₃Waxay leedahay isticmaalka baahsan ee korantada, dareeraha gaaska, filimka khafiifka ah ee muraayadaha cas-cas, codsiga kicinta, wax lagu daro midabka dhalada khaaska ah, baytariyada alkaline, iyo furayaasha korantada ee hadda jira iyo xiriirada, dahaarka ilaalinta muraayadda macdan, iyo filimka semiconductor of electro-optical bandhig iwm. In₂O₃waa qaybta ugu muhiimsan ee bartilmaameedka ITO ee bandhigyada, daaqadaha tamarta fiican iyo sawir-qaadista.Intaa waxaa dheer, In₂O₃waa unug iska caabin ah oo ku jira ICs si ay u sameeyaan heterojunctions oo wata agabka sida p-InP, n-GaAs, n-Si iyo semiconductors kale.Dhanka kale, Haysashada saamaynta dusha sare, cabbir yar iyo saamaynta tunneling quantum macroscopic,Nano In₂O₃ugu horrayn waxaa loogu talagalay daahan indhaha iyo antistatic, codsiga daahan conductive hufan.

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Tilmaamaha Farsamada

In₂O₃

Muuqashada	budada jaalaha ah
Miisaanka Molecular	277.63
Cufnaanta	7.18 g/cm³
Meesha dhalaalaysa	2000°C
CAS Maya.	1312-43-2

Maya	Shayga		Tilmaamaha Heerka
1	Daahirnimada gudaha₂O₃≥		Nijaasnimo ( Warbixinta Imtixaanka ICP-MS ee PPM Max kasta)
2	4N	99.99%	Cu/Al 20, Ti 3.0, Pb 4.0, Sn 7.0, Cd 8.0, Fe 15	Wadarta ≤100
	4N5	99.995%	Cu/Al/Cd/Sn/Ti/Ni/As/Zn 1.0, Si 2.0, Fe/Ca 5.0	Wadarta ≤50
	5N	99.999%	Cu/Pb/Cd/Fe/Ni 0.5, Ca/Sn/Ti 1.0	Wadarta ≤10
	6N	99.9999%	La heli karo marka la codsado	Wadarta ≤1.0
3	Cabbirka		Budada 2-10μm ee 4N 5N5 5N daahirnimo, -100budada mesh ee nadiifinta 6N
4	Baakad		1kg oo ku jira dhalada polyetylenka oo ay ku jirto bac daboolan oo dibadda ah

Indium oxide gudaha₂O₃ ama Indium Trioxide In₂O₃at Western Minmetals (SC) Corporation waxaa lagu geyn karaa iyadoo nadiif ah 99.99%, 99.995%, 99.999% iyo 99.9999% 4N 4N5 5N 6N oo cabirkeedu yahay 2-10 micron ama -100 budo mesh ah iyo nano grade, 1kg oo ka buuxaan polyethylene bac xiran, ka dibna sanduuqa kartoon ee dibadda, ama sida loo habeeyey si ay xal ugu fiican.

Indium oxide gudaha₂O₃Waxay leedahay isticmaalka baahsan ee korantada, dareeraha gaaska, filimka khafiifka ah ee muraayadaha cas-cas, codsiga kicinta, wax lagu daro midabka dhalada khaaska ah, baytariyada alkaline, iyo furayaasha korantada ee hadda jira iyo xiriirada, dahaarka ilaalinta muraayadda macdan, iyo filimka semiconductor of electro-optical bandhig iwm. In₂O₃waa qaybta ugu muhiimsan ee bartilmaameedka ITO ee bandhigyada, daaqadaha tamarta fiican iyo sawir-qaadista.Intaa waxaa dheer, In₂O₃waa unug iska caabin ah oo ku jira ICs si ay u sameeyaan heterojunctions oo wata agabka sida p-InP, n-GaAs, n-Si iyo semiconductors kale.Dhanka kale, Haysashada saamaynta dusha sare, cabbir yar iyo saamaynta tunneling quantum macroscopic, Nano In₂O₃ugu horrayn waxaa loogu talagalay daahan indhaha iyo antistatic, codsiga daahan conductive hufan.