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Indium Fosfide InP

Sharaxaada

Indium Fosfide InP,CAS No.22398-80-7, barta dhalaalka 1600 ° C, semiconductor-ka labanlaab ah ee qoyska III-V, qaab dhismeedka kubik-kubiyeedka "zinc blende", oo la mid ah inta badan semiconductors III-V, ayaa laga sameeyay 6N 7N nadiifinta sare ee indium iyo curiyaha fosfooraska, oo ku koray hal crystal farsamo LEC ama VGF.Indium Phosphide crystal waxaa loo sameeyay inuu noqdo n-nooca, p-nooca ama korantada semi-insulating si loogu sameeyo wafer dheeraad ah ilaa 6 ″ (150 mm) dhexroor, kaas oo muujinaya faraqa band ee tooska ah, dhaqdhaqaaqa sare ee elektarooniga iyo godadka iyo kulayl hufan. dhaqdhaqaaqa.Indium Phosphide InP Wafer Prime ama darajada tijaabada ee Western Minmetals (SC) Corporation waxaa lagu bixin karaa nooca p-nooca, n-nooca iyo dahaadhka-dahaadhka ee cabbirka 2" 3" 4" iyo 6" (ilaa 150mm) dhexroor, hanuuninta <111> ama <100> iyo dhumucdiisuna tahay 350-625um oo leh dhammaystir dusha sare ee xardhan oo la safeeyey ama habka Epi-diyaar u ah.Dhanka kale Indium Phosphide Single Crystal ingot 2-6″ waa la heli karaa marka la codsado.Polycrystalline Indium Phosphide InP ama Multi-crystal InP ingot ee cabbirka D(60-75) x Dhererka (180-400) mm 2.5-6.0kg oo leh uruurinta qaade ka yar 6E15 ama 6E15-3E16 ayaa sidoo kale la heli karaa.Faahfaahin kasta oo la habeeyey oo la heli karo marka la codsado si loo gaaro xalka ugu fiican.

Codsiyada

Indium Phosphide InP wafer waxaa si weyn loogu isticmaalaa soo saarista qaybaha optoelectronic, awood sare iyo qalabka elektarooniga ah ee soo noqnoqda, sida substrate for epitaxial indium-gallium-arsenide (InGaAs) ku salaysan qalabka opto-electronic.Indium Phosphide sidoo kale waxay ku jirtaa abuuritaanka ilaha iftiinka ee aadka u rajo weyn ee isgaarsiinta fiber optic, aaladaha isha tamarta microwave, cod-weyneyaasha mikrowave iyo aaladaha albaabka FETs, modulators-xawaaraha sare iyo sawir-qaadayaasha, iyo satalaytka navigation iyo wixii la mid ah.


Faahfaahin

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Tilmaamaha Farsamada

Indium Fosfide InP

InP-W

Indium Fosfide Hal Crystal ahWafer (InP crystal ingot ama Wafer) ee Western Minmetals (SC) Corporation waxaa lagu bixin karaa nooca p-nooc, n-nooca iyo korantada-dahaarka ee cabbirka 2" 3" 4" iyo 6" (ilaa 150mm) dhexroor, hanuuninta <111> ama <100> iyo dhumucdiisuna tahay 350-625um oo leh dhammaystir dusha sare ee xardhan oo la safeeyey ama habka Epi-diyaar u ah.

Indium Fosfide Polycrystallineama Multi-Crystal ingot (InP poly ingot) oo cabbirkeedu yahay D(60-75) x L(180-400) mm 2.5-6.0kg oo leh uruurin qaade ka yar 6E15 ama 6E15-3E16 ayaa diyaar ah.Faahfaahin kasta oo la habeeyey oo la heli karo marka la codsado si loo gaaro xalka ugu fiican.

Indium Phosphide 24

Maya Walxaha Tilmaamaha Heerka
1 Indium Fosfide Hal Crystal ah 2" 3" 4"
2 Dhexroor mm 50.8±0.5 76.2±0.5 100±0.5
3 Habka Kobaca VGF VGF VGF
4 Hab-dhaqanka P/Zn-doped, N/(S-doped ama un-doped), Semi-insulating
5 Hanuuninta (100)±0.5°, (111)±0.5°
6 Dhumucda μm 350± 25 600± 25 600± 25
7 Hanuuninta Flat mm 16±2 22±1 32.5±1
8 Aqoonsiga Flat mm 8±1 11 ± 1 18±1
9 Dhaqdhaqaaqa cm2/Vs 50-70,>2000, (1.5-4)E3
10 Xoog-ururinta side cm-3 (0.6-6)E18, ≤3E16
11 TTV μm max 10 10 10
12 Qaanso μm max 10 10 10
13 Warp μm max 15 15 15
14 Cufnaanta Kala-baxa cm-2 max 500 1000 2000
15 Dhamaystir dusha sare P/E, P/P P/E, P/P P/E, P/P
16 Baakad Weel kaliya oo wafer ah ayaa lagu xidhay bac aluminium ka kooban.

 

Maya

Walxaha

Tilmaamaha Heerka

1

Indium Fosfide Ingot

Poly-crystal ama Multi-crystal Ingot

2

Cabbirka Crystal

D (60-75) x L (180-400) mm

3

Miisaanka Crystal Ingot

2.5-6.0Kg

4

Dhaqdhaqaaqa

≥3500 cm2/VS

5

Isku-xidhka Qaadista

≤6E15, ama 6E15-3E16 cm-3

6

Baakad

Mid kasta oo InP crystal ingot ah waxa uu ku jira bac xidhan, 2-3 ingots hal sanduuq oo kartoon ah.

Qaanuunka toosan InP
Miisaanka Molecular 145.79
Qaab dhismeedka crystal Isku darka Zinc
Muuqashada Crystalline
Meesha dhalaalaysa 1062°C
Barta Karsan N/A
Cufnaanta 300K 4.81 g/cm3
Farqiga Tamarta 1.344 eV
Iska caabin gudaha ah 8.6E7 Ω-cm
Lambarka CAS 22398-80-7
Lambarka EC 244-959-5

Indium Fosfide InP Waferwaxaa si weyn loogu isticmaalaa soo saarista qaybaha optoelectronic, awooda sare iyo qalabka elektarooniga ah ee soo noqnoqda, sida substrate for epitaxial indium-gallium-arsenide (InGaAs) oo ku salaysan qalab elektaroonik ah.Indium Phosphide sidoo kale waxay ku jirtaa abuuritaanka ilaha iftiinka ee aadka u rajo weyn ee isgaarsiinta fiber optic, aaladaha isha tamarta microwave, cod-weyneyaasha mikrowave iyo aaladaha albaabka FETs, modulators-xawaaraha sare iyo sawir-qaadayaasha, iyo satalayt-ka-wareejinta iyo wixii la mid ah.

InP-W2

InP-W6

Indium Phosphide 4

PC-15

s18

Talooyin wax iibsiga

  • Tusaalaha La Heli Karaa Marka La Codsado
  • Keenista Badbaadada Alaabooyinka ee Boostada/Hawada/Badda
  • COA/COC Maamulka Tayada
  • Baakad ammaan ah & ku habboon
  • Xirmooyinka caadiga ah ee Qaramada Midoobay ayaa la heli karaa marka la codsado
  • ISO9001:2015 waa la xaqiijiyay
  • Shuruudaha CPT/CIP/FOB/CFR By Incoterms 2010
  • Shuruudaha lacag-bixinta dabacsan T/TD/PL/C waa la aqbali karaa
  • Adeegyada Iibka Kadib oo Dhamaystiran
  • Kormeerka Tayada ee Xarunta casriga ah
  • Oggolaanshaha Xeerarka Rohs/GAARAAN
  • Heshiisyada Aan Shaacinta Lahayn NDA
  • Siyaasadda Macdanta ee Aan Khilaafsanayn
  • Dib u eegista Maareynta Deegaanka Joogtada ah
  • Fulinta Masuuliyadda Bulshada

Indium Fosfide InP


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