CZ Silicon Wafer

Sharaxaada

CZ Single Crystal Silicon Wafer waa la jarjaray oo ka soo jeeda hal silikoon silikoon ah oo ay soo jiidatay habka koritaanka Czochralski CZ, kaas oo inta badan loo isticmaalo korriinka kristal ee silikoon ee galalka waaweyn ee loo isticmaalo warshadaha elektiroonigga ah si loo sameeyo aaladaha semiconductor.Habkan, iniin caato ah oo silikoon crystal ah oo leh dulqaad toosan oo toosan ayaa lagu dhex gelinayaa qubayska dhalaalaysa ee silikoon kaas oo heerkulkiisu si sax ah loo xakameeyay.Karistaanka abuurku si tartiib tartiib ah ayuu kor uga soo baxayaa dhalaalka iyadoo la xakameynayo, adkeynta crystalline ee atamka ee marxaladda dareeraha waxay ku dhacdaa interface, crystal abuurka iyo crucible ayaa loo rogaa jihooyin ka soo horjeeda inta lagu jiro habka ka bixitaanka, abuurista hal weyn Silicon crystal leh qaab-dhismeedka crystalline qumman ee abuurku.

Thanks to the field magnetic codsatay heerka CZ ingot jiidashada, Magnetic-field-induced Czochralski MCZ silicon crystal hal silikoon oo ka hooseeya nijaasta hoose, heerka ogsijiinta hoose iyo kala-baxa, iyo kala duwanaansho iska caabin lebbiska kaas oo si fiican u shaqeeya qaybaha elektarooniga ah iyo qalabka. samaynta warshadaha elektarooniga ah ama sawir-qaadista.

gaarsiin

CZ ama MCZ Single Crystal Silicon Wafer n-nooca iyo p-nooca conductivity ee Western Minmetals (SC) Corporation waxaa lagu keeni karaa size of 2, 3, 4, 6, 8 iyo 12 inch dhexroor (50, 75, 100, 125, 150, 200 iyo 300mm), hanuuninta <100>, <110>, <111> oo leh dusha sare ee dhabta ah, la xardhay oo la safeeyey baakidh xumbo ah ama cajalad leh sanduuq kartoon oo dibadda ah.

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Tilmaamaha Farsamada

CZ Silicon Wafer

CZ Single Crystal Silicon Wafer waa sheyga aasaasiga ah ee wax soo saarka wareegyada isku dhafan, diodes, transistor, qaybaha discrete, loo isticmaalo dhammaan noocyada qalabka elektarooniga ah iyo qalabka semiconductor, iyo sidoo kale substrate in processing epitaxial, substrate wafer SOI ama semi-insulating wafer wafer ka samaysan, gaar ahaan waaweyn. dhexroorka 200mm, 250mm iyo 300mm ayaa ugu fiican soo saarista aaladaha aadka u isku dhafan.Silikoon kali ah ayaa sidoo kale loo isticmaalaa unugyada cadceedda tiro badan oo ay sameeyaan warshadaha sawir-qaadista, kaas oo ku dhawaad qaab-dhismeedka crystal-ka kaamilka ah uu keeno waxtarka ugu sarreeya ee iftiinka-ilaa-korontada.

Maya	Walxaha	Tilmaamaha Heerka
1	Cabbirka	2"	3"	4"	6"	8"	12"
2	Dhexroor mm	50.8±0.3	76.2±0.3	100±0.5	150±0.5	200±0.5	300±0.5
3	Hab-dhaqanka	P ama N ama aan dawo lahayn
4	Hanuuninta	<100>, <110>, <111>
5	Dhumucda μm	279, 381, 425, 525, 575, 625, 675, 725 ama sida loo baahdo
6	Iska caabin Ω-cm	≤0.005, 0.005-1, 1-10, 10-20, 20-100, 100-300 iwm
7	RRV max	8%, 10%, 12%
8	Dabaqa hoose/dhererka mm	Sida heerka SEMI ama sida loo baahan yahay
9	Dabaqa sare/dhererka mm	Sida heerka SEMI ama sida loo baahan yahay
10	TTV μm max	10	10	10	10	10	10
11	Qaanso & Warp μm max	30	30	30	30	30	30
12	Dhamaystir dusha sare	Sida loo gooyay, L/L, P/E, P/P
13	Baakad	Sanduuqa xumbo ama cajalad gudaha ah, sanduuq kartoon oo dibadda ah.

Astaanta	Si
Lambarka atomiga	14
Miisaanka Atoomiga	28.09
Qaybta Qaybta	Metalloid
Kooxda, Muddada, xannibaadda	14, 3, P
Qaab dhismeedka crystal	Dheeman
Midabka	Cawlan madow
Meesha dhalaalaysa	1414°C, 1687.15 K
Barta Karsan	3265°C, 3538.15 K
Cufnaanta 300K	2.329 g/cm³
Iska caabin gudaha ah	3.2E5 Ω-cm
Lambarka CAS	7440-21-3
Lambarka EC	231-130-8

CZ ama MCZ Single Crystal Silicon WaferN-nooca iyo p-nooca conductivity ee Western Minmetals (SC) Corporation waxaa lagu gaarsiin karaa cabbirka 2, 3, 4, 6, 8 iyo 12 dhexroor (50, 75, 100, 125, 150, 200 iyo 300mm), hanuuninta <100>, <110>, <111> oo leh dusha sare ee sida-goyn, dhabtii, xardhan oo la safeeyey oo ku jira baakidh xumbo ah ama cajalad leh sanduuq kartoon oo dibadda ah.