Sharaxaada
FZ Single Crystal Silicon Wafer,Float-zone (FZ) Silikoon waa silikoon aad u saafi ah oo leh oksijiin iyo wasakhda kaarboon aad u yar oo ay jiidatay tignoolajiyada sifaynta aaga sabbaynaysa ee toosan.Aagga sabaynta FZ waa hal qaab oo koraya crystal ingot kaas oo ka duwan habka CZ halkaas oo abuurka abuurku ku xidhan yahay silikoon ingot polycrystalline, iyo xadka u dhexeeya abuur crystal iyo polycrystalline crystal silikon waxaa dhalaalay by RF gariiradda induction kuleylinta hal crystallization.Gariiradda RF iyo aagga dhalaalay waxay u dhaqaaqaan xagga sare, iyo hal kiristaalo ah ayaa ku adkeysanaya dusha sare ee crystal abuurka si waafaqsan.Silikoon aagga sabbaynaya waxa lagu hubiyaa qaybinta dopant lebis ah, kala duwanaanshiyaha iska caabbinta hoose, xaddidaadda xaddi wasakhaysan, cimriga sidaha badan, bartilmaameedka iska caabbinta sare iyo silikoon nadiif ah oo sarreeya.Silikoon aagga sabbaynaya waa beddel nadiif ah oo sarreeya oo ka samaysan kiristaalo koray habka Czochralski CZ.Sifooyinka habkan, FZ Single Crystal Silicon waxay ku habboon tahay in loo isticmaalo soo saarista aaladaha elektiroonigga ah, sida diodes, thyristors, IGBTs, MEMS, diode, aaladda RF iyo MOSFET-yada awoodda, ama sida substrate-ka qayb-qalin sare ama indho-indheeyayaal , Qalabka korontada iyo dareemayaasha, tamarta sare ee unugyada qorraxda iwm.
gaarsiin
FZ Single Crystal Silicon Wafer N-nooca iyo nooca P-nooca conductivity ee Western Minmetals (SC) Corporation waxaa lagu gaarsiin karaa cabbirka 2, 3, 4, 6 iyo 8 inch (50mm, 75mm, 100mm, 125mm, 150mm iyo 200mm) iyo hanuuninta <100>, <110>, <111> oo leh dhammaystirka dusha sare ee As-cut, Lapped, xardhan oo lagu safeeyey xirmo sanduuqa xumbo ama cajalad leh sanduuq kartoon oo dibadda ah.
Tilmaamaha Farsamada
FZ Single Crystal Silicon Waferama FZ Mono-crystal Silicon Wafer ee gudaha, n-nooca iyo nooca p-conductivity ee Western Minmetals (SC) Corporation waxaa lagu geyn karaa cabbirro kala duwan oo 2, 3, 4, 6 iyo 8 inch ah dhexroor (50mm, 75mm, 100mm . oo leh sanduuq kartoon oo dibadda ah.
Maya | Walxaha | Tilmaamaha Heerka | ||||
1 | Cabbirka | 2" | 3" | 4" | 5" | 6" |
2 | Dhexroor mm | 50.8±0.3 | 76.2±0.3 | 100±0.5 | 125±0.5 | 150±0.5 |
3 | Hab-dhaqanka | N/P | N/P | N/P | N/P | N/P |
4 | Hanuuninta | <100>, <110>, <111> | ||||
5 | Dhumucda μm | 279, 381, 425, 525, 575, 625, 675, 725 ama sida loo baahdo | ||||
6 | Iska caabin Ω-cm | 1-3, 3-5, 40-60, 800-1000, 1000-1400 ama sida loo baahdo | ||||
7 | RRV max | 8%, 10%, 12% | ||||
8 | TTV μm max | 10 | 10 | 10 | 10 | 10 |
9 | Qaanso/Warp μm max | 30 | 30 | 30 | 30 | 30 |
10 | Dhamaystir dusha sare | Sida loo gooyay, L/L, P/E, P/P | ||||
11 | Baakad | Sanduuqa xumbo ama cajalad gudaha ah, sanduuq kartoon oo dibadda ah. |
Astaanta | Si |
Lambarka atomiga | 14 |
Miisaanka Atoomiga | 28.09 |
Qaybta Qaybta | Metalloid |
Kooxda, Muddada, xannibaadda | 14, 3, P |
Qaab dhismeedka crystal | Dheeman |
Midabka | Cawlan madow |
Meesha dhalaalaysa | 1414°C, 1687.15 K |
Barta Karsan | 3265°C, 3538.15 K |
Cufnaanta 300K | 2.329 g/cm3 |
Iska caabin gudaha ah | 3.2E5 Ω-cm |
Lambarka CAS | 7440-21-3 |
Lambarka EC | 231-130-8 |
FZ Hal Silikoon Crystal ah, oo leh sifooyinka ugu muhiimsan ee habka Float-zone (FZ), ayaa ku habboon in loo isticmaalo samaynta qalabka elektaroonigga ah, sida diodes, thyristors, IGBTs, MEMS, diode, RF qalab iyo MOSFETs awood, ama sida substrate-ka ee xallinta sare. Qalabka cadceedda ama indhaha, qalabka korontada iyo dareemayaasha, unugyada cadceedda oo tayo sare leh iwm.
Talooyin wax iibsiga
FZ Silicon Wafer