Sharaxaada
Gallium Antimonide GaSb, semiconductor ka mid ah kooxda III-V xeryahooda oo leh qaab dhismeedka shabagga zinc-blende, waxaa soo saaray 6N 7N daahirinta sare ee gallium iyo walxaha antimony, oo koray si crystal by habka LEC laga bilaabo habka barafaysan ee polycrystalline ingot ama habka VGF oo leh EPD<1000cm-3.Waferka GaSb waa la jeexjeexi karaa oo laga dhex-abuuri karaa ka dib laga bilaabo hal-abuurka crystalline oo leh lebis sare oo cabbir koronto ah, qaab-dhismeedyo gaar ah oo joogto ah, iyo cufnaanta cilladda oo hooseeya, tusaha wax-soo-celinta ugu sarreeya marka loo eego xeryahooda kale ee aan biraha ahayn.GaSb waxaa lagu farsamayn karaa doorasho balaadhan oo sax ah ama ka baxsan jihayn, fiirsi hoose ama sare leh, dusha sare oo wanaagsan iyo MBE ama MOCVD korriinka epitaxial.Substrate Gallium Antimonide waxaa laga faa'iidaystaa kuwa ugu casrisan sawir-optic iyo optoelectronic-ka sida been-abuurka sawir-sheegayaasha, qalabka-infrared-ka leh nolosha dheer, dareenka sare iyo isku-kalsoonaanta, qaybta sawir-qaadista, LED-yada infrared iyo lasers, transistors, kulaylka unugyada sawir-qaadista iyo hababka heerkulka-photovoltaic.
gaarsiin
Gallium Antimonide GaSb ee Western Minmetals (SC) Corporation waxaa lagu bixin karaa nooca n-nooca, p-nooca iyo korantada semi-dahaarka aan la daboolin ee cabbirka 2" 3" iyo 4" (50mm, 75mm, 100mm) dhexroor, hanuunin <111> ama <100>, oo leh dusha sare ee wafer ee sida-la jarjaray, xardhan, la safeeyey ama tayada sare lehDhammaan qaybaha si gaar ah ayaa leysarka loogu qoray aqoonsiga.Dhanka kale, buro polycrystalline gallium antimonide GaSb sidoo kale waa la habeeyey marka la codsado xalka ugu fiican.
Tilmaamaha Farsamada
Gallium Antimonide GaSbSubstrate-ka waxaa looga faa'iidaystaa kuwa ugu casrisan ee sawir-optic iyo optoelectronic sida samaynta qalabka sawir-qaadayaasha, qalabka-infrared-ka leh cimri dheer, dareen sare iyo isku halaynta, qaybta sawir-qaadista, LED-yada infrared iyo lasers, transistor-ka, unugga photovoltaic kulaylka iyo kulaylka Nidaamyada sawir-qaadista.
Walxaha | Tilmaamaha Heerka | |||
1 | Cabbirka | 2" | 3" | 4" |
2 | Dhexroor mm | 50.5±0.5 | 76.2±0.5 | 100±0.5 |
3 | Habka Kobaca | LEC | LEC | LEC |
4 | Hab-dhaqanka | Nooca P-nooca/Zn-doped, Un-doped, N-nooca/Te-doped | ||
5 | Hanuuninta | (100)±0.5°, (111)±0.5° | ||
6 | Dhumucda μm | 500± 25 | 600± 25 | 800± 25 |
7 | Hanuuninta Flat mm | 16±2 | 22±1 | 32.5±1 |
8 | Aqoonsiga Flat mm | 8±1 | 11 ± 1 | 18±1 |
9 | Dhaqdhaqaaqa cm2/Vs | 200-3500 ama sida loo baahan yahay | ||
10 | Xoog-ururinta side cm-3 | (1-100) E17 ama sida loo baahdo | ||
11 | TTV μm max | 15 | 15 | 15 |
12 | Qaanso μm max | 15 | 15 | 15 |
13 | Warp μm max | 20 | 20 | 20 |
14 | Cufnaanta Kala-baxa cm-2 max | 500 | 1000 | 2000 |
15 | Dhamaystir dusha sare | P/E, P/P | P/E, P/P | P/E, P/P |
16 | Baakad | Weel kaliya oo wafer ah ayaa lagu xidhay bac aluminium ah. |
Qaanuunka toosan | GaSb |
Miisaanka Molecular | 191.48 |
Qaab dhismeedka crystal | Isku darka Zinc |
Muuqashada | Gray crystalline adag |
Meesha dhalaalaysa | 710°C |
Barta Karsan | N/A |
Cufnaanta 300K | 5.61 g/cm3 |
Farqiga Tamarta | 0.726 eV |
Iska caabin gudaha ah | 1E3 Ω-cm |
Lambarka CAS | 12064-03-8 |
Lambarka EC | 235-058-8 |
Gallium Antimonide GaSbat Western Minmetals (SC) Corporation waxaa lagu bixin karaa nooca n-nooca, p-nooca iyo korantada semi-insulating ee aan la daboolin ee cabbirka 2" 3" iyo 4" (50mm, 75mm, 100mm) dhexroor, hanuunin <111> ama <100 >, oo leh dhammayn dusha sare ee wafer ee sida-goyn, xardhan, la safeeyey ama tayada sare leh ee epitaxy diyaarsan.Dhammaan qaybaha si gaar ah ayaa leysarka loogu qoray aqoonsiga.Dhanka kale, buro polycrystalline gallium antimonide GaSb sidoo kale waa la habeeyey marka la codsado xalka ugu fiican.
Talooyin wax iibsiga
Gallium Antimonide GaSb