Sharaxaada
Gallium ArsenideGAAs waa farqiga kooxda tooska ah semiconductor-ka kooxda III-V oo lagu farsameeyay ugu yaraan 6N 7N gallium daahir sare ah iyo element arsenic, iyo koray crystal by VGF ama habka LEC ka daahirnimo sare polycrystalline gallium arsenide, muuqaalka midabka cawl, kiristaalo cubic leh qaab-dhismeedka zinc-blende.Kaarboonka, silikoon, tellurium ama zinc si loo helo n-nooca ama p-nooca iyo korantada nus-daahiyaha, siday u kala horreeyaan, cylindrical InAs crystal waa la jarjaray oo la dhex-abuuri karaa madhan oo wafer sida-goyn, xardhan, dhalaalaysa ama epi. - diyaar u ah MBE ama MOCVD korriinka epitaxial.Waferka Gallium Arsenide waxaa inta badan loo isticmaalaa in lagu sameeyo aaladaha elektiroonigga ah sida diodes-ka iftiinka soo saara infrared, diode-ka leysarka, daaqadaha indhaha, transistor-yada saameeya FET-yada, toosan ee IC-yada dhijitaalka ah iyo unugyada cadceedda.Qaybaha GaAs waxay faa'iido u leeyihiin raadiyaha aadka u sarreeya iyo codsiga beddelka elektiroonigga ah ee degdegga ah, codsiyada kor u qaadida calaamadaha daciifka ah.Intaa waxaa dheer, Gallium Arsenide substrate waa shay ku habboon soo saarista qaybaha RF, inta jeer ee microwave iyo monolithic ICs, iyo aaladaha LED-yada ee isgaarsiinta indhaha iyo nidaamyada kontoroolka loogu talagalay dhaq-dhaqaaqeeda hoolka, awoodda sare iyo xasilloonida heerkulka.
gaarsiin
Gallium Arsenide GaAs at Western Minmetals (SC) Corporation waxaa lagu siin karaa sida buro polycrystalline ah ama wafer hal kiristaalo ah oo la jarjaray, la xiiray, la sifayn, ama maraq u diyaarsan oo cabbirkeedu yahay 2" 3" 4" iyo 6" (50mm, 75mm, 100mm, 150mm) dhexroor, oo leh nooca p-nooca, n-nooca ama dahaadhka nus-dahaadhka ah, iyo <111> ama <100> hanuuninta.Tilmaamaha la habeeyey ayaa loogu talagalay xalka ugu fiican ee macaamiisheena adduunka oo dhan.
Tilmaamaha Farsamada
Gallium Arsenide GaAswafer-yada waxaa inta badan loo isticmaalaa in lagu farsameeyo qalabka elektiroonigga ah sida dareerayaasha iftiinka soo saara infrared, leysarka laysarka, daaqadaha indhaha, transistors FET-yada, toosan ee IC-yada dhijitaalka ah iyo unugyada cadceedda.Qaybaha GaAs waxay faa'iido u leeyihiin raadiyaha aadka u sarreeya iyo codsiga beddelka elektiroonigga ah ee degdegga ah, codsiyada kor u qaadida calaamadaha daciifka ah.Intaa waxaa dheer, Gallium Arsenide substrate waa shay ku habboon soo saarista qaybaha RF, inta jeer ee microwave iyo monolithic ICs, iyo aaladaha LED-yada ee isgaarsiinta indhaha iyo nidaamyada kontoroolka loogu talagalay dhaq-dhaqaaqeeda hoolka, awoodda sare iyo xasilloonida heerkulka.
Maya | Walxaha | Tilmaamaha Heerka | |||
1 | Cabbirka | 2" | 3" | 4" | 6" |
2 | Dhexroor mm | 50.8±0.3 | 76.2±0.3 | 100±0.5 | 150±0.5 |
3 | Habka Kobaca | VGF | VGF | VGF | VGF |
4 | Nooca Anshaxa | N-Nooca/Si ama Te-doped, P-Nooca/Zn-doped, Semi-Insulating/Un-doped | |||
5 | Hanuuninta | (100)±0.5° | (100)±0.5° | (100)±0.5° | (100)±0.5° |
6 | Dhumucda μm | 350± 25 | 625±25 | 625±25 | 650± 25 |
7 | Hanuuninta Flat mm | 17±1 | 22±1 | 32±1 | Darajo |
8 | Aqoonsiga Flat mm | 7±1 | 12±1 | 18±1 | - |
9 | Iska caabin Ω-cm | (1-9) E (-3) nooca p-nooc ama n-nooca, (1-10)E8 ee dahaadhka-sumada ah | |||
10 | Dhaqdhaqaaqa cm2/vs | 50-120 ee p-nooca, (1-2.5)E3 ee n-nooca, ≥4000 oo loogu talagalay dahaadhka nus-daahiyaha | |||
11 | Xoog-ururinta side cm-3 | (5-50)E18 ee nooca p, (0.8-4)E18 ee nooca n- | |||
12 | TTV μm max | 10 | 10 | 10 | 10 |
13 | Qaanso μm max | 30 | 30 | 30 | 30 |
14 | Warp μm max | 30 | 30 | 30 | 30 |
15 | EPD cm-2 | 5000 | 5000 | 5000 | 5000 |
16 | Dhamaystir dusha sare | P/E, P/P | P/E, P/P | P/E, P/P | P/E, P/P |
17 | Baakad | Weel kaliya oo wafer ah ayaa lagu xidhay bac aluminium ka kooban. | |||
18 | Hadallo | Darajada makaanikada ee GaAs wafer sidoo kale waa la heli karaa marka la codsado. |
Qaanuunka toosan | GAAs |
Miisaanka Molecular | 144.64 |
Qaab dhismeedka crystal | Isku darka Zinc |
Muuqashada | Gray crystalline adag |
Meesha dhalaalaysa | 1400°C, 2550°F |
Barta Karsan | N/A |
Cufnaanta 300K | 5.32 g/cm3 |
Farqiga Tamarta | 1.424 eV |
Iska caabin gudaha ah | 3.3E8 Ω-cm |
Lambarka CAS | 1303-00-0 |
Lambarka EC | 215-114-8 |
Gallium Arsenide GaAsat Western Minmetals (SC) Corporation waxaa lagu siin karaa sida buro polycrystalline ah ama wafer hal kiristaalo ah oo la jarjaray, xardhan, la safeeyey, ama wafers diyaarsan oo cabbirkeedu yahay 2" 3" 4" iyo 6" (50mm, 75mm, 100mm , 150mm) dhexroor, oo leh nooca p-nooca, n-nooca ama korantada-dahaadhka nus-daahiyaha, iyo <111> ama <100> hanuuninta.Tilmaamaha la habeeyey ayaa loogu talagalay xalka ugu fiican ee macaamiisheena adduunka oo dhan.
Talooyin wax iibsiga
Gallium Arsenide Wafer