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Gallium oxide

Sharaxaada

Gallium Oxide Ga2O399.99%, 99.999% iyo 99.9999% 4N 5N 6N, budo adag oo cad oo labadaba α iyo β crystal weji, CAS 12024-21-4, miisaanka molecular 187.44, dhibic dhalaalaysa 1740 ° C, oo aan milmin biyaha intiisa badan, laakiin milma. waa qalab semiconductor ah oo hufan oo leh sifooyin aad u wanaagsan oo ah faraqa aadka u weyn ee ka weyn 4.9eV, iyo helitaanka cabbir weyn, substrates tayo sare leh oo laga soo saaray kiristaalo badan oo dhalaalay.Gallium Oxide Ga2O3Waxay leedahay rajooyin ballaadhan oo loogu talagalay codsiga warshadaha indhaha sida lakabka dahaadhka ee qalabka semiconductor-ka ee Ga-ku-salaysan, sida filtarrada ultraviolet, sida baaritaanka kiimikooyinka ee ogsijiinta, xannibaadda xakamaynta isku-xirnaanta adag, qalabka semiconductor-ka indhaha iyo codsiyada dhoobada.Gallium oxide waxa kale oo loo isticmaalaa dheesha iftiinka iftiinka LEDs budada fluorescent, reagent nadiif ah oo sarreeya, iyo sidoo kale laysarka iyo walxaha kale ee iftiinka iwm.

gaarsiin

Gallium Oxide ama Gallium Trioxide Ga2O3 qaabka α ama β nooca crystallographic oo leh nadiif ah 99.99%, 99.999% iyo 99.9999% (4N 5N 6N) Western Minmetal (SC) Corporation waxaa lagu bixin karaa cabbirka budada D50 ≤ 4.0micron , -80mesh (1micron 50-100 mesh (0.15-0.30micron) ee xirmada 1kg, 2kg ee dhalada polyetylen, ama 1kg, 2kg, 5kg ee bac aluminium ah oo faaruq ah oo leh sanduuq kartoon oo ka baxsan 10kg ama 20kg shabaq kasta, ama sida xalalka gaarka ah .


Faahfaahin

Tags

Tilmaamaha Farsamada

Ga2O3

Muuqashada crystal cad
Miisaanka Molecular 187.44
Cufnaanta -
Meesha dhalaalaysa 1740 °C
CAS Maya. 12024-21-4

Maya

Shayga

Tilmaamaha Heerka

1

daahirnimoGa2O3

wasakhnimo(ICP-MS PPM Max kasta)

2

4N

99.99%

Mg/Ni/Mn 3.0, Cr/Ca/Co/Cd/Cu/Sn 5.0, Pb 8.0, Na/Fe/Al 10

Wadarta ≤100

5N

99.999%

Mg/Ni/Mn 0.1, Cr/ Ca/Cu/Cd/Cu/Sn 0.5, Na/Al/Fe 1.0, Pb 1.5

Wadarta ≤10

6N

99.9999%

Mn/Ca/Co/Cd 0.05, Pb/Al/Fe/Cu/Sn 0.1

Wadarta ≤1.0

3

Foomka Crystallographic

α ama β nooca

4

Cabbirka

D50≤ 4um, -80 mesh ama 50-100 budo mesh ah

5

Baakad

1kg, 2kg dhalo caag ah, ama 1kg, 2kg, 5kg oo ku jira bac aluminium ah oo leh sanduuq kartoon oo ka baxsan

Gallium Oxide Ga2O3 ama Gallium Trioxide Ga2O3qaabka α ama β nooca crystallographic oo leh nadiif ah 99.99%, 99.999% iyo 99.9999% (4N 5N 6N) Western Minmetal (SC) Corporation waxaa lagu bixin karaa cabbirka budada D50 ≤ 4.0micron , -80mesh (1micron 50-100 mesh (0.15-0.30micron) ee xirmada 1kg, 2kg ee dhalada polyetylen, ama 1kg, 2kg, 5kg ee bac aluminium ah oo faaruq ah oo leh sanduuq kartoon oo ka baxsan, ama sida loo habeeyey xalalka ugu fiican.

Gallium Oxide Ga2O3ama Gallium Trioxide waxay leedahay rajooyin ballaadhan oo ku saabsan codsiga warshadaha optoelectronic sida lakabka dahaadhka ee qalabka semiconductor-ka ee Ga-ku-salaysan, sida filtarrada ultraviolet, sida baaritaanka kiimikaad ee ogsijiinta, xannibaad dahaarka ah ee isku xirka adag, qalabka semiconductor indhaha iyo codsiyada dhoobada.Gallium oxide waxa kale oo loo isticmaalaa dheesha iftiinka iftiinka LEDs budada fluorescent, reagent nadiif ah oo sarreeya, iyo sidoo kale laysarka iyo walxaha kale ee iftiinka iwm.

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Gallium Oxide Ga2O3


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