Indium Arsenide InAs

Sharaxaada

Indium arsenide InAs crystal waa semiconductor isku dhafka ah ee kooxda III-V oo lagu farsameeyay ugu yaraan 6N 7N Indium saafi ah iyo curiyaha Arsenic iyo koray hal crystal by VGF ama Dareere Czochralski (LEC), muuqaalka midabka cawl, kiristaalo cubic leh qaab-dhismeedka zinc-blende , barta dhalaalaysa ee 942 °C.Farqiga band arsenide ee Indium waa kala-guur toos ah oo la mid ah gallium arsenide, iyo ballaca band ee mamnuuca ah waa 0.45eV (300K).InAs crystal waxa uu leeyahay lebis sare ee xuduudaha korantada, shabag joogto ah, dhaqdhaqaaqa elektaroonigga sare iyo cufnaanta cillad hoose.Karistaanka cylindrical InAs ee ay koreen VGF ama LEC waa la jarjari karaa oo lagu dhejin karaa maraq sida loo jarjaray, la sawiray, la safeeyey ama u diyaarsan MBE ama MOCVD korriinka epitaxial.

Codsiyada

Waferka 'Indium arsenide crystal wafer' waa substrate aad u wanaagsan samaynta aaladaha Hall-ka iyo dareeraha magnetic-ka ee dhaqdhaqaaqa hoolka ugu sarreeya laakiin tamar cidhiidhi ah, oo ah shay ku habboon dhismaha qalabka wax baadha infrared oo leh dhererka hirarka 1-3.8 µm ee loo isticmaalo codsiyada awoodda sare leh. heerkulka qolka, iyo sidoo kale dhexda mowjadda dhererka infrared super lattice lasers, dhexda-infrared LEDs qalabyada farsamaynta dhererkeeda 2-14 μm.Intaa waxaa dheer, InAs waa substrate ku habboon si loo sii taageero noocyada kala duwan ee InGaAs, InAsSb, InAsPSb & InNAsSb ama AlGaSb qaab dhismeedka xargaha super iwm.

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Tilmaamaha Farsamada

Indium Arsenide

InAs

Indium Arsenide Crystal Waferwaa qayb weyn oo loogu talagalay samaynta aaladaha Hall-ka iyo dareeraha magnetic-ka ee dhaqdhaqaaqa hoolka ugu sarreeya laakiin tamar cidhiidhi ah, oo ah shay ku habboon dhismaha aaladaha infrared oo leh dhererka dhererka 1-3.8 µm ee loo isticmaalo codsiyada awoodda sare ee heerkulka qolka, iyo sidoo kale dhexda mawjadda dhererka infrared super lattice lasers, aaladaha LED-yada dhexe ee dhex-dhexaadka ah ee farsamaynta dhererkeeda dhererka 2-14 μm.Intaa waxaa dheer, InAs waa substrate ku habboon si loo sii taageero noocyada kala duwan ee InGaAs, InAsSb, InAsPSb & InNAsSb ama AlGaSb qaab dhismeedka xargaha super iwm.

Maya	Walxaha	Tilmaamaha Heerka
1	Cabbirka	2"	3"	4"
2	Dhexroor mm	50.5±0.5	76.2±0.5	100±0.5
3	Habka Kobaca	LEC	LEC	LEC
4	Hab-dhaqanka	Nooca P-nooca/Zn-doped, N-nooca/S-doped, aan-doped lahayn
5	Hanuuninta	(100)±0.5°, (111)±0.5°
6	Dhumucda μm	500± 25	600± 25	800± 25
7	Hanuuninta Flat mm	16±2	22±2	32±2
8	Aqoonsiga Flat mm	8±1	11 ± 1	18±1
9	Dhaqdhaqaaqa cm2/Vs	60-300, ≥2000 ama sida loo baahdo
10	Xoog-ururinta side cm-3	(3-80) E17 ama ≤5E16
11	TTV μm max	10	10	10
12	Qaanso μm max	10	10	10
13	Warp μm max	15	15	15
14	Cufnaanta Kala-baxa cm-2 max	1000	2000	5000
15	Dhamaystir dusha sare	P/E, P/P	P/E, P/P	P/E, P/P
16	Baakad	Weel kaliya oo wafer ah ayaa lagu xidhay bac aluminium ah.

Qaanuunka toosan	InAs
Miisaanka Molecular	189.74
Qaab dhismeedka crystal	Isku darka Zinc
Muuqashada	Gray crystalline adag
Meesha dhalaalaysa	(936-942)°C
Barta Karsan	N/A
Cufnaanta 300K	5.67 g/cm³
Farqiga Tamarta	0.354 eV
Iska caabin gudaha ah	0.16 Ω-cm
Lambarka CAS	1303-11-3
Lambarka EC	215-115-3

Indium Arsenide InAsat Western Minmetals (SC) Corporation waxaa lagu siin karaa sida buro polycrystalline ah ama hal crystal sida-goyn, xardhan, la safeeyey, ama wafers diyaarsan oo cabbirkeedu yahay 2" 3" iyo 4" (50mm, 75mm,100mm) dhexroor, iyo p-nooca, n-nooca ama habdhaqanka aan-doped lahayn iyo <111>ama <100> hanuuninta.Tilmaamaha la habeeyey ayaa loogu talagalay xalka ugu fiican ee macaamiisheena adduunka oo dhan.