Indium Fosfide InP

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Indium Fosfide InP,CAS No.22398-80-7, barta dhalaalka 1600 ° C, semiconductor-ka labanlaab ah ee qoyska III-V, qaab dhismeedka kubik-kubiyeedka "zinc blende", oo la mid ah inta badan semiconductors III-V, ayaa laga sameeyay 6N 7N nadiifinta sare ee indium iyo curiyaha fosfooraska, oo ku koray hal crystal farsamo LEC ama VGF.Indium Phosphide crystal waxaa loo sameeyay inuu noqdo n-nooca, p-nooca ama korantada semi-insulating si loogu sameeyo wafer dheeraad ah ilaa 6 ″ (150 mm) dhexroor, kaas oo muujinaya faraqa band ee tooska ah, dhaqdhaqaaqa sare ee elektarooniga iyo godadka iyo kulayl hufan. dhaqdhaqaaqa.Indium Phosphide InP Wafer Prime ama darajada tijaabada ee Western Minmetals (SC) Corporation waxaa lagu bixin karaa nooca p-nooca, n-nooca iyo dahaadhka-dahaadhka ee cabbirka 2" 3" 4" iyo 6" (ilaa 150mm) dhexroor, hanuuninta <111> ama <100> iyo dhumucdiisuna tahay 350-625um oo leh dhammaystir dusha sare ee xardhan oo la safeeyey ama habka Epi-diyaar u ah.Dhanka kale Indium Phosphide Single Crystal ingot 2-6″ waa la heli karaa marka la codsado.Polycrystalline Indium Phosphide InP ama Multi-crystal InP ingot ee cabbirka D(60-75) x Dhererka (180-400) mm 2.5-6.0kg oo leh uruurinta qaade ka yar 6E15 ama 6E15-3E16 ayaa sidoo kale la heli karaa.Faahfaahin kasta oo la habeeyey oo la heli karo marka la codsado si loo gaaro xalka ugu fiican.

Codsiyada

Indium Phosphide InP wafer waxaa si weyn loogu isticmaalaa soo saarista qaybaha optoelectronic, awood sare iyo qalabka elektarooniga ah ee soo noqnoqda, sida substrate for epitaxial indium-gallium-arsenide (InGaAs) ku salaysan qalabka opto-electronic.Indium Phosphide sidoo kale waxay ku jirtaa abuuritaanka ilaha iftiinka ee aadka u rajo weyn ee isgaarsiinta fiber optic, aaladaha isha tamarta microwave, cod-weyneyaasha mikrowave iyo aaladaha albaabka FETs, modulators-xawaaraha sare iyo sawir-qaadayaasha, iyo satalaytka navigation iyo wixii la mid ah.

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Tilmaamaha Farsamada

Indium Fosfide InP

Indium Fosfide Hal Crystal ahWafer (InP crystal ingot ama Wafer) ee Western Minmetals (SC) Corporation waxaa lagu bixin karaa nooca p-nooc, n-nooca iyo korantada-dahaarka ee cabbirka 2" 3" 4" iyo 6" (ilaa 150mm) dhexroor, hanuuninta <111> ama <100> iyo dhumucdiisuna tahay 350-625um oo leh dhammaystir dusha sare ee xardhan oo la safeeyey ama habka Epi-diyaar u ah.

Indium Fosfide Polycrystallineama Multi-Crystal ingot (InP poly ingot) oo cabbirkeedu yahay D(60-75) x L(180-400) mm 2.5-6.0kg oo leh uruurin qaade ka yar 6E15 ama 6E15-3E16 ayaa diyaar ah.Faahfaahin kasta oo la habeeyey oo la heli karo marka la codsado si loo gaaro xalka ugu fiican.

Maya	Walxaha	Tilmaamaha Heerka
1	Indium Fosfide Hal Crystal ah	2"	3"	4"
2	Dhexroor mm	50.8±0.5	76.2±0.5	100±0.5
3	Habka Kobaca	VGF	VGF	VGF
4	Hab-dhaqanka	P/Zn-doped, N/(S-doped ama un-doped), Semi-insulating
5	Hanuuninta	(100)±0.5°, (111)±0.5°
6	Dhumucda μm	350± 25	600± 25	600± 25
7	Hanuuninta Flat mm	16±2	22±1	32.5±1
8	Aqoonsiga Flat mm	8±1	11 ± 1	18±1
9	Dhaqdhaqaaqa cm2/Vs	50-70,>2000, (1.5-4)E3
10	Xoog-ururinta side cm-3	(0.6-6)E18, ≤3E16
11	TTV μm max	10	10	10
12	Qaanso μm max	10	10	10
13	Warp μm max	15	15	15
14	Cufnaanta Kala-baxa cm-2 max	500	1000	2000
15	Dhamaystir dusha sare	P/E, P/P	P/E, P/P	P/E, P/P
16	Baakad	Weel kaliya oo wafer ah ayaa lagu xidhay bac aluminium ka kooban.

Maya	Walxaha	Tilmaamaha Heerka
1	Indium Fosfide Ingot	Poly-crystal ama Multi-crystal Ingot
2	Cabbirka Crystal	D (60-75) x L (180-400) mm
3	Miisaanka Crystal Ingot	2.5-6.0Kg
4	Dhaqdhaqaaqa	≥3500 cm²/VS
5	Isku-xidhka Qaadista	≤6E15, ama 6E15-3E16 cm^-3
6	Baakad	Mid kasta oo InP crystal ingot ah waxa uu ku jira bac xidhan, 2-3 ingots hal sanduuq oo kartoon ah.

Qaanuunka toosan	InP
Miisaanka Molecular	145.79
Qaab dhismeedka crystal	Isku darka Zinc
Muuqashada	Crystalline
Meesha dhalaalaysa	1062°C
Barta Karsan	N/A
Cufnaanta 300K	4.81 g/cm³
Farqiga Tamarta	1.344 eV
Iska caabin gudaha ah	8.6E7 Ω-cm
Lambarka CAS	22398-80-7
Lambarka EC	244-959-5

Indium Fosfide InP Waferwaxaa si weyn loogu isticmaalaa soo saarista qaybaha optoelectronic, awooda sare iyo qalabka elektarooniga ah ee soo noqnoqda, sida substrate for epitaxial indium-gallium-arsenide (InGaAs) oo ku salaysan qalab elektaroonik ah.Indium Phosphide sidoo kale waxay ku jirtaa abuuritaanka ilaha iftiinka ee aadka u rajo weyn ee isgaarsiinta fiber optic, aaladaha isha tamarta microwave, cod-weyneyaasha mikrowave iyo aaladaha albaabka FETs, modulators-xawaaraha sare iyo sawir-qaadayaasha, iyo satalayt-ka-wareejinta iyo wixii la mid ah.