Silicon Carbide SiC

Sharaxaada

Silicon Carbide Wafer SiC, waa mid aad u adag, isku-dhafka crystalline ka samaysan ee silikoon iyo kaarboon habka MOCVD, oo soo bandhigayafarqiga u gaarka ah ee ballaaran iyo sifooyinka kale ee wanaagsan ee isku-dhafka hooseeya ee balaadhinta kulaylka, heerkulka shaqada sare, daadi kulaylka wanaagsan, beddelka hoose iyo khasaaraha korantada, tamar badan oo hufan, kororka kuleylka sare iyo xoogga burburka beerta koronto, iyo sidoo kale qulqulo badan oo xoog leh. xaalad.Silicon Carbide SiC at Western Minmetals (SC) Corporation waxaa lagu bixin karaa cabbirka 2" 3' 4" iyo 6" (50mm, 75mm, 100mm, 150mm) dhexroor, oo leh nooca n-n-ku-dahaaran ama wafer-ka-baxsan ee warshadaha iyo codsiga shaybaarka.Qeexitaan kasta oo la habeeyay ayaa loogu talagalay xalka ugu fiican macaamiishayada adduunka oo dhan.

Codsiyada

Tayada sare leh ee 4H / 6H Silicon Carbide SiC wafer waxay ku fiican tahay wax soo saarka kuwa badan oo goyn-goyn ah oo dhakhso badan, heerkul sare & aalado korantada sare leh sida Schottky diodes & SBD, MOSFETs & JFETs, iwm. sidoo kale walxo la jecel yahay oo ku jira cilmi baarista & horumarinta transistor-ka laba-cirifoodka ee dahaaran iyo thyristors.Sida walaxda jiilka cusub ee heersare ah, Silicon Carbide SiC wafer waxa kale oo ay u adeegtaa sida faafinta kulaylka hufan ee qaybaha tamarta sare leh ee LED-yada, ama sida substrate deggan oo caan ah oo kobcaya lakabka GaN si ay u door bidayso sahaminta sayniska ee mustaqbalka la beegsanayo.

hadda weydii

Faahfaahin

Tags

Tilmaamaha Farsamada

Silicon Carbide SiC

Silicon Carbide SiCat Western Minmetals (SC) Corporation waxaa lagu bixin karaa cabbirka 2" 3' 4" iyo 6" (50mm, 75mm, 100mm, 150mm) dhexroor, oo leh nooca n-n, semi-insulating ama maraqa qashinka ee codsiga warshadaha iyo shaybaarka .Qeexitaan kasta oo la habeeyey ayaa loogu talagalay xalka ugu fiican ee macaamiisheena adduunka oo dhan.

Qaanuunka toosan	SiC
Miisaanka Molecular	40.1
Qaab dhismeedka crystal	Wurtzite
Muuqashada	Adag
Meesha dhalaalaysa	3103 ± 40K
Barta Karsan	N/A
Cufnaanta 300K	3.21 g/cm³
Farqiga Tamarta	(3.00-3.23) eV
Iska caabin gudaha ah	> 1E5 Ω-cm
Lambarka CAS	409-21-2
Lambarka EC	206-991-8

Maya	Walxaha	Tilmaamaha Heerka
1	Cabirka SiC	2"	3"	4"	6"
2	Dhexroor mm	50.8 0.38	76.2 0.38	100 0.5	150 0.5
3	Habka Kobaca	MOCVD	MOCVD	MOCVD	MOCVD
4	Nooca Anshaxa	4H-N, 6H-N, 4H-SI, 6H-SI
5	Iska caabin Ω-cm	0.015-0.028;0.02-0.1;>1E5
6	Hanuuninta	0°±0.5°;4.0° dhanka <1120>
7	Dhumucda μm	330± 25	330± 25	(350-500) ± 25	(350-500) ± 25
8	Goobta Guriga Hoose	<1-100>±5°	<1-100>±5°	<1-100>±5°	<1-100>±5°
9	Dhererka Guriga aasaasiga ah mm	16± 1.7	22.2±3.2	32.5±2	47.5±2.5
10	Goobta Guriga Sare	Silikoonka kor u kaca: 90°, saacadu u jeeddo dabaqa koowaad ±5.0°
11	Dhererka siman ee sare mm	8± 1.7	11.2 ± 1.5	18±2	22± 2.5
12	TTV μm max	15	15	15	15
13	Qaanso μm max	40	40	40	40
14	Warp μm max	60	60	60	60
15	Cidhifka ka saarida mm max	1	2	3	3
16	Cufnaanta Micropipe cm-2	<5, warshadaha;<15, shaybaadhka;<50, hooyo
17	Kala guurid cm-2	<3000, warshadaha;<20000, shaybaar;<500000, hooyo
18	Dusha sare ee Roughness nm max	1 (Labadalay), 0.5 (CMP)
19	dildilaaca	Midna, darajada warshadaha
20	Taariko laba geesood ah	Midna, darajada warshadaha
21	xoqid	≤3mm, dhererka guud ee ka yar dhexroorka substrate
22	Chips Edge	Midna, darajada warshadaha
23	Baakad	Weel kaliya oo wafer ah ayaa lagu xidhay bac aluminium ka kooban.

Silicon Carbide SiC 4H/6HWafer tayo sare leh ayaa ku habboon soo saarista qalab badan oo heer sare ah oo heer sare ah oo dhakhso badan, heerkul sare & aaladaha elektiroonigga ah ee korantada sare sida Schottky diodes & SBD, MOSFETs & JFETs, iwm. cilmi baarista & horumarinta transistor-ka laba-cirifoodka ee dahaaran iyo thyristors.Sida walaxda jiilka cusub ee heersare ah, Silicon Carbide SiC wafer waxa kale oo ay u adeegtaa sida faafinta kulaylka hufan ee qaybaha tamarta sare leh ee LED-yada, ama sida substrate deggan oo caan ah oo kobcaya lakabka GaN si ay u door bidayso sahaminta sayniska ee mustaqbalka la beegsanayo.