Sharaxaada
Hal Crystal Germanium Wafer/Ingotama monocrystalline germanium waa muuqaal midab cawlan qalin ah, barta dhalaalka 937°C, cufnaanta 5.33 g/cm3.Germanium-ka crystalline waa jajaban yahay wuxuuna leeyahay caag yar heerkulka qolka.Germanium nadiif ah oo sarreeya waxaa lagu helaa aagga sabbeynaya oo lagu dhejiyay indium iyo gallium ama antimony si loo helo n-nooca ama nooca p-conductivity, kaas oo leh dhaqdhaqaaqa elektarooniga ah iyo dhaqdhaqaaqa dalool sare, waxaana lagu kululayn karaa koronto-diidmo ama ka-hortagga barafka. codsiyada.Hal Crystal Germanium waxaa koray tignoolajiyada Vertical Gradient Freeze VGF si ay u hubiso xasiloonida kiimikada, iska caabinta daxalka, gudbinta wanaagsan, tusmaynta refractive aad u saraysa iyo heer sare oo kaamil ah.
Codsiyada
Hal Crystal Germanium Waxay helaysaa codsiyo rajo leh oo ballaadhan, kuwaas oo darajada elektiroonigga ah loo isticmaalo diodes iyo transistor-ka, Infrared ama germanium fasalka indhaha ee bannaan ama daaqada waa daaqadaha indhaha ee IR ama saxanadaha, qaybaha indhaha ee loo isticmaalo aragtida habeenkii iyo xalalka sawir-qaadaha ee amniga, cabbirka heerkulka fog, dagaalka dabka iyo qalabka la socodka warshadaha, nooca P iyo N nooca Germanium wafer ayaa sidoo kale loo isticmaali karaa tijaabada saameynta Hall.Darajada unuggu waxa loogu talagalay substrates-ka loo isticmaalo unugyada qoraxda ee saddex-jibbaaran ee III-V iyo awoodda Nidaamyada PV ee unugyada cadceedda iwm.
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Tilmaamaha Farsamada
Hal Crystal Germanium Wafer ama Ingotoo leh nooca n-nooca, p-nooca iyo conductivity un-doped iyo hanuuninta <100> ee Western Minmetals (SC) Corporation waxaa lagu geyn karaa cabbirka 2, 3, 4 iyo 6 dhexroor inch (50mm, 75mm, 100mm iyo 150mm) leh Dhammaystirka dusha sare ee xardhan ama la safeeyey ee xirmada sanduuqa xumbo ama cajalad loogu talagalay maraqa iyo bac caag ah oo shaabadaysan oo loogu talagalay sanduuqa kartoonada ee dibadda, polycrystalline germanium ingot sidoo kale waa la heli karaa marka la codsado, ama sida qeexitaanka loo habeeyey si loo gaaro xalka ugu fiican.
Astaanta | Ge |
Lambarka atomiga | 32 |
Miisaanka Atoomiga | 72.63 |
Qaybta Qaybta | Metalloid |
Kooxda, Muddada, xannibaadda | 14, 4, P |
Qaab dhismeedka crystal | Dheeman |
Midabka | Cran cawlan |
Meesha dhalaalaysa | 937°C, 1211.40K |
Barta Karsan | 2833°C, 3106K |
Cufnaanta 300K | 5.323 g/cm3 |
Iska caabin gudaha ah | 46 Ω-cm |
Lambarka CAS | 7440-56-4 |
Lambarka EC | 231-164-3 |
Maya | Walxaha | Tilmaamaha Heerka | |||
1 | Germanium Wafer | 2" | 3" | 4" | 6" |
2 | Dhexroor mm | 50.8±0.3 | 76.2±0.3 | 100±0.5 | 150±0.5 |
3 | Habka Kobaca | VGF ama CZ | VGF ama CZ | VGF ama CZ | VGF ama CZ |
4 | Hab-dhaqanka | Nooca P / doped (Ga ama In), nooca N-nooca/ doped Sb, Un-doped | |||
5 | Hanuuninta | (100)±0.5° | (100)±0.5° | (100)±0.5° | (100)±0.5° |
6 | Dhumucda μm | 145, 175, (500-1000) | |||
7 | Iska caabin Ω-cm | 0.001-50 | 0.001-50 | 0.001-50 | 0.001-50 |
8 | Dhaqdhaqaaqa cm2/Vs | >200 | >200 | >200 | >200 |
9 | TTV μm max | 5,8,10 | 5,8,10 | 5,8,10 | 5,8,10 |
10 | Qaanso μm max | 15 | 15 | 15 | 15 |
11 | Warp μm max | 15 | 15 | 15 | 15 |
12 | Kala-baxa cm-2 max | 300 | 300 | 300 | 300 |
13 | EPD cm-2 | <4000 | <4000 | <4000 | <4000 |
14 | Qaybaha Tirooyinka a/wafer max | 10 ( saacada ≥0.5μm) | 10 ( saacada ≥0.5μm) | 10 ( saacada ≥0.5μm) | 10 ( saacada ≥0.5μm) |
15 | Dhamaystir dusha sare | P/E, P/P ama sida loo baahdo | |||
16 | Baakad | Weel kaliya oo wafer ah ama cajalad gudaha ah, sanduuq kartoon oo dibadda ah |
Maya | Walxaha | Tilmaamaha Heerka | |||
1 | Germanium Ingot | 2" | 3" | 4" | 6" |
2 | Nooca | Nooca P / doped (Ga, In), N-nooca/ doped (As, Sb), Aan-doped | |||
3 | Iska caabin Ω-cm | 0.1-50 | 0.1-50 | 0.1-50 | 0.1-50 |
4 | Qaade Lifetime μs | 80-600 | 80-600 | 80-600 | 80-600 |
5 | Dhererka Ingot mm | 140-300 | 140-300 | 140-300 | 140-300 |
6 | Baakad | Lagu xidhay bac ama sanduuqa xumbo gudaha, sanduuqa kartoonka ee dibadda ah | |||
7 | Odhaah | Polycrystalline germanium ingot waa la heli karaa marka la codsado |
Hal Crystal GermaniumWaxay helaysaa codsiyo rajo leh oo ballaadhan, kuwaas oo darajada elektiroonigga ah loo isticmaalo diodes iyo transistor-ka, Infrared ama germanium fasalka indhaha ee bannaan ama daaqada waa daaqadaha indhaha ee IR ama saxanadaha, qaybaha indhaha ee loo isticmaalo aragtida habeenkii iyo xalalka sawir-qaadaha ee amniga, cabbirka heerkulka fog, dagaalka dabka iyo qalabka la socodka warshadaha, nooca P iyo N nooca Germanium wafer ayaa sidoo kale loo isticmaali karaa tijaabada saameynta Hall.Darajada unuggu waxa loogu talagalay substrates-ka loo isticmaalo unugyada qoraxda ee saddex-jibbaaran ee III-V iyo awoodda Nidaamyada PV ee unugyada cadceedda iwm.
Talooyin wax iibsiga
Hal Crystal Germanium